University of Minnesota
Institute of Technology
myU OneStop

Philip Cohen 2013

Philip I. Cohen


Area of expertise: Nanostructured materials, Surfaces and interfaces, Electron diffraction, Molecular Beam Epitaxy

Ph.D., Physics, 1975, University of Wisconsin, Madison, WI, United States
B.A., Physics, 1969, Johns Hopkins University, Baltimore, MD, United States

Contact information
Office: 5-131 Keller Hall
Telephone: (612) 625-5517
E-mail: picohen (at)
Personal Web Site:

As devices and nanostructures become ever smaller, the surface or interface to volume ratio becomes so large that these surfaces and interfaces dominate device performance.  My interest has been to develop new methods to fabricate and control these interfaces, develop new tools to characterize them, and finally to use these tools to measure and understand the new properties of the engineered nanomaterials that we have learned to prepare.

Selected publications
Wang, F., Liu, G., Rothwell, S., Nevius, M., Tajeda, A., Taleb-Ibrahimi, A., Feldman, L. C., Cohen, P. I. and Conrad, E. H.
Wide-gap semiconducting graphene from nitrogen-seeded SiC
Nano Lett., 2013, Vol. 13, pp. 4827-4832


Mihnev, M. T., Wang, F., Liu, G., Rothwell, S., Cohen, P. I., Feldman, L. C., Conrad, E. H. and Norris, T. B.
Evidence for bandgap opening in buckled epitaxial graphene from ultrafast time-resolved terahertz spectroscopy
Appl. Phys. Lett., 2015, Vol. 107(17), pp. 173107 (5pp)


Rothwell, S., Wang, F., Liu, G., Feldman, L. C., Guisinger, N., Conrad, E. H. and Cohen, P. I.
Landau level splitting in nitrogen-seeded epitaxial graphene
Submitted, 2015


Wang, F., Liu, G., Rothwell, S., Nevius, M. S., Mathieu, C., Barrett, N., Sala, A., Mentes, T. O., Locatelli, A., Cohen, P. I., Feldman, L. C. and Conrad, E. H.
Pattern Induced Ordering Of Semiconducting Graphene Ribbons Grown From nitrogen-seeded SiC
Carbon, 2015, Vol. 82, pp. 360-367

Kesaria, M., Shetty, S., Cohen, P. I. and Shivaprasad, S. M.
Transformation Of C-oriented Nanowall Network To A Flat Morphology In GaN films on c-plane sapphire
Mater. Res. Bull., 2011, Vol. 46(11), pp. 1811-1813